TA37 - Transistors, Thyristors, Triacs, Diodes, Zener diodes

TA37 - Transistors, Thyristors, Triacs, Diodes, Zener diodes

Testing: Bipolar Transistors (NPN, PNP, Low power, Darlington, Field effect transistors (N-channel, P-channel, Power-MOS), Diodes, Zenner diodes, Arrays, 2000V optional.

PARAMETERS - BIPOLAR TRANSISTORS

  • Breakdown voltage VCE0(BR)
  • Breakdown voltage VCES(BR)
  • Saturation voltage VCE(sat)
  • Saturation voltage VCB0
  • Breakdown voltage VCB0
  • Breakdown voltage VEB0
  • Diode forward voltage VF(diode)
  • Collector/Emitter cutoff current ICEO, ICBO, IEBO
  • On voltage VBE(on)
  • DC current gain hfe(DC)
  • AC current gain h21e(AC)
     

PARAMETERS – TRIACS & THYRISTORS

  • Gate trigger current IGT
  • Gate trigger voltage VGT
  • Off-state leakage current IDO
  • Hold current IH
  • Latch current IL
     

PARAMETERS – DIODES & ZENNER DIODES

  • Forward voltage VF
  • Reverse voltage VR
  • Zenner voltage VZ
  • Reverse leakage current IR
  • Dynamic resistance DC RDdyn
  • Dynamic resistance AC Rz
     

PARAMETERS – MOS-FETS

  • Breakdown voltage V(BR)DSS
  • Inverse diode voltage VSD
  • Gate threshold voltage VGS
  • On resistance RDS(on)
  • Forward transconductance gfs
  • Forward/Reverse leakage current IGSS
  • On voltage VDS(on)
  • On-state drain current ID(on)
     

TA37.TIM



AC Parameters

  • Reverse Recovery Time tRR
  • Turn-on time tON
  • Turn-off time tOFF

 

Contact: 

 Jiří Marek        

Jiří Marek

 

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