UNITES Systems a.s.
Kpt. Macha 1372
757 01 Valašské Meziříčí
T: 571 757 230
E: info@unites.cz
IČ: 25863665   DIČ: CZ25863665

Kontakty

TA37B - modernizovaná TA07B

TA37B - modernizovaná TA07B

Testuje: Bipolární tranzistory (NPN, PNP, Low power, Darlington, FET (N-channel, P-channel, Power-MOS), Diody, Zenerovy diody, Diodvá pole, 2000V volitelně

PARAMETRY - BIPOLÁRNÍ TRANSISTORY

  • Breakdown voltage VCE0(BR)
  • Breakdown voltage VCES(BR)
  • Saturation voltage VCE(sat)
  • Saturation voltage VCB0
  • Breakdown voltage VCB0
  • Breakdown voltage VEB0
  • Diode forward voltage VF(diode)
  • Collector/Emitter cutoff current ICEO, ICBO, IEBO
  • On voltage VBE(on)
  • DC current gain hfe(DC)
  • AC current gain h21e(AC)
     

PARAMETRY – TRIAKY & TYRISTORY

  • Gate trigger current IGT
  • Gate trigger voltage VGT
  • Off-state leakage current IDO
  • Hold current IH
  • Latch current IL
     

PARAMETRY – DIODY & ZENEROVY DIODY

  • Forward voltage VF
  • Reverse voltage VR
  • Zenner voltage VZ
  • Reverse leakage current IR
  • Dynamic resistance DC RDdyn
  • Dynamic resistance AC Rz
     

PARAMETRY – MOS-FETY

  • Breakdown voltage V(BR)DSS
  • Inverse diode voltage VSD
  • Gate threshold voltage VGS
  • On resistance RDS(on)
  • Forward transconductance gfs
  • Forward/Reverse leakage current IGSS
  • On voltage VDS(on)
  • On-state drain current ID(on)

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